![]() MICRO- OR NANO-WIRE LED LIGHT SOURCE COMPRISING MEANS FOR MEASURING TEMPERATURE
专利摘要:
The invention provides an electroluminescence light source comprising electroluminescent rods of submillimetric dimnesions protruding from a substrate and distributed into a plurality of identical groups. The light source includes means for measuring the temperature of the electroluminescent rods. By using the measurements of the invention, it becomes possible to obtain precise and localized measurements of the temperature of the rods. 公开号:FR3041202A1 申请号:FR1558537 申请日:2015-09-14 公开日:2017-03-17 发明作者:Lothar Seif;Zdravko Zojceski 申请人:Valeo Vision SA; IPC主号:
专利说明:
The invention relates to the field of lighting and light signaling, in particular for a motor vehicle. In the field of lighting and light signaling for motor vehicles, it is becoming more and more common to use light sources with electroluminescent semiconductor components, for example light-emitting diodes, LEDs. An LED component emits light rays when a voltage of a value at least equal to a threshold value called forward voltage is applied to these terminals. In known manner, one or more LEDs of a light module for a motor vehicle are powered through power control means, which include converter circuits. The power control means are configured to convert an electric current of a first intensity, for example provided by a current source of the motor vehicle, such as a battery, into a charging current having a second intensity, different from the first. The operation of an LED depends on the temperature of its junction p-n. Beyond a threshold temperature, there is a risk of permanent damage to the LED component. The color of the light emitted by an LED and its intensity also depend on the junction temperature. In general, the junction temperature depends on the intensity of the electric current flowing through it and on the ambient temperature of the light module. In order to be able to manage the desired light emission, and to be able to guarantee the longevity of LED components, it is known to use temperature measuring means that give an indication of the temperature of one or more LEDs. This information is then used by a power control circuit of the LED. For LEDs in the form of chips implanted on a printed circuit board, PCB ("printed circuit board"), use surface-mounted SMD (surface mounted device), such as thermistors, whose resistance depends of their temperature. By measuring the voltage drop across the thermistor, it is possible to deduce the temperature of the thermistor. When the thermistor is placed near an LED on a PCB, it can be concluded that the measured temperature is an approximation of the junction temperature of the LED in question. The actual temperature of the junction is not measurable by this method. Especially in the field of light modules for motor vehicles, which imposes space constraints on electronic components, it is generally used a small number of thermistors even if a plurality of LEDs is present on a PCB, for lack of space. Obviously the quality of the temperature approximation of the individual LEDs suffers. The object of the invention is to propose a solution that overcomes the aforementioned problem. More particularly, the object of the invention is to propose a micro or nano-son LED light source having integrated temperature measurement means. The subject of the invention is an electroluminescent light source comprising a first substrate and a plurality of submillimetric electroluminescent rods projecting from the substrate. The light source is remarkable in that it comprises means for measuring the temperature of the electroluminescent rods. Preferably, the rods can be arranged in a matrix. The matrix may preferably be regular, so that there is a constant spacing between two successive rods of a given alignment, or so that the rods are arranged in staggered rows. The height of a stick may preferably be between 1 and 10 micrometers. The largest dimension of the end face may preferably be less than 2 micrometers. Preferably, the minimum distance between two immediately adjacent rods may be 10 microns. The area of the illuminating surface of the light source may preferably be at most 8 mm 2. The luminance obtained by the plurality of electroluminescent rods may for example be at least 60Cd / mm 2. The means for measuring the temperature may preferably be means for directly measuring the temperature of the electroluminescent rods. Preferably, the first substrate may comprise silicon. Advantageously, the first substrate is silicon. The temperature measuring means can preferably be arranged on a second substrate, the second substrate being attached to the first substrate on the face opposite the face of which the rods project. Preferably, the first and second substrates, the electroluminescent rods and the measuring means may be encapsulated in the same housing, in particular so as to form a single component. Preferably, the second substrate comprises silicon. Advantageously, the second substrate is made of silicon. Both substrates can preferably be attached using a gold-tin weld. Preferably, the temperature measuring means can be integrated with the first substrate. The means for measuring the temperature may preferably be arranged among the rods. The electroluminescent rods may preferentially be divided into several groups, the rods of each group being able to emit a specific light, and in that the source comprises means for measuring temperature for each of the groups. Preferably, the light source may comprise control means able to drive each group independently of the other groups and according to the temperature measurement of this group. Preferably, each of the groups may be able to emit light of a specific intensity. Each of the groups may be able to emit light of a specific color. The means for measuring the temperature may preferably comprise a bipolar diode. Preferably the temperature measuring means may comprise an electronic circuit which bases its operation on the measurement of a variation of the direct voltage of a bipolar diode under the influence of a specific electric current, comprising a transistor arrangement. and / or a current generator. Preferably, this electronic circuit can be implanted directly in the substrate of the light source. The circuit may preferably be fed with the source in common, so no additional connection to a dedicated power source is required. Preferably, the temperature measuring means may comprise a group of electroluminescent rods of the source. Said group among the rods may preferably be supplied periodically by said specific current for a period of less than the period and during the rest of the period by a current determined for the group to participate in a lighting function. The means for measuring the temperature may preferably comprise an electronic measuring circuit. The measuring circuit may advantageously be integrated with the first substrate of the source. The invention also relates to a light module comprising at least one light source capable of emitting light rays, and an optical device adapted to receive the light rays and to produce a light beam. The module is remarkable in that the light source or sources are in accordance with the invention. The measurements of the invention are interesting in that they make it possible to obtain a measurement representative of the temperature of a light source with electroluminescent nano- or micro-wires, also described as electroluminescent rods. Since the temperature means are directly implanted on or attached to the substrate of the light source, the measured temperature gives a good indication of the effective temperature of the semiconductor junctions of the rods. According to a preferred embodiment, a plurality of temperature measuring means can be implanted at specific positions on the substrate of the light source, which allows a robust management of the source and / or different groups of rods of the source. Other features and advantages of the present invention will be better understood from the description and the drawings, in which: FIG. 1 is a representation of a light source as it operates in a preferred embodiment of the present invention; FIG. 2 is a schematic representation of a view from above of a light source according to a preferred embodiment of the invention; FIG. 3 is a schematic representation of a view from above of a light source according to a preferred embodiment of the invention; FIG. 4 is a schematic representation of a side section of a light source according to a preferred embodiment of the invention; FIG. 5 is a schematic representation of a side section of a light source according to a preferred embodiment of the invention. In the following description, like reference numerals will generally be used to describe similar concepts through different embodiments of the invention. Thus, the numbers 001, 101, 201, 301, 401 describe a light source of the different embodiments according to the invention. Unless specifically indicated otherwise, technical characteristics described in detail for a given embodiment may be combined with the technical characteristics described in the context of other embodiments described by way of example and not limitation. FIG. 1 illustrates an electroluminescent light source 001 according to a first embodiment of the invention. Figure 1 illustrates the basic principle of the light source. The light source 001 comprises a substrate 010 on which are disposed a series of electroluminescence diodes in the form of wires or rods 020 protruding from the substrate. The core 022 of each rod 020 is made of n-type semiconductor material, that is to say doped with electrons, whereas the envelope 024 is made of a p-type semiconductor material, that is to say doped. in holes. A recombination zone 026 is provided between n-type and p-type semiconductor materials. However, it is possible to invert the semiconductor materials depending in particular on the chosen technology. The substrate is preferably silicon and the rods have a diameter of less than one micron. In a variant, the substrate comprises a layer of semiconductor material doped with holes and the wires have a diameter of between 100 and 500 nm. The semiconductor material doped with electrons and holes forming the diodes may advantageously be gallium nitride (GaN) or gallium-indium nitride (InGaN). The height of a stick is typically between 1 and 10 micrometers, while the largest dimension of the end face is less than 2 micrometers. According to a preferred embodiment, the rods are arranged in a matrix in a regular arrangement. The distance between two rods is constant and equal to at least 10 micrometers. The sticks can be arranged in staggered rows. The area of the illuminating surface of such a light source is at most 8 mm 2. The source is capable of achieving a luminance of at least 60 Cd / mm2 With reference to FIG. 1, the substrate 010 comprises a main layer 030, advantageously made of silicon, a first electrode or cathode 040 disposed on the face of the main layer which is opposite to the rods 020, and a second electrode or anode 050 disposed on the face comprising the diodes 020. The anode 050 is in contact with the p-type semiconductor material forming the envelopes 024 of the diodes 020 and extending on the corresponding face of the substrate 010 so as to form a conductive layer between said 024 envelopes and 050 anode. The cores or cores 022 of the rods are in turn in contact with the semiconducting main layer 030 and thus in electrical contact with the cathode 040. When applying an electrical voltage between the anode and the cathode, electrons of the n-type semiconductor material recombine with holes in the p-type semiconductor material and emit photons. Most recombinations are radiative. The emitting face of the diodes is the zone p because it is the most radiative. According to some embodiments of the invention, the light source 001 comprises several groups of electroluminescent rods connected to different anodes. Each group can thus be powered electrically independently of the other or others. The diodes or rods of each group are advantageously all of the same type, that is to say, emitting in the same spectrum and emit at a common intensity. The groups are advantageously identical and represent a common forward voltage. Preferably, each group therefore comprises substantially the same number of semiconductor wires. According to the principle of the invention, means for measuring the temperature are integrated in the source 001. Such an integration is shown in preferred and exemplary embodiments in FIGS. 2 to 5. FIG. 2 shows an electroluminescent light source 101 comprising a substrate 110 and a plurality of wire-shaped electroluminescent rods 120 projecting from the substrate. The source further comprises means for measuring the temperature of the rods 130. The substrate 110 is advantageously made of silicon, which makes it possible to integrate the means for measuring the temperature 130 directly into the substrate 110. The direct implantation of the means measurement 130 in the middle of the diodes 120 provides a measurement point physically very close to the semiconductor junctions whose temperature is to be measured. This integration into the light source makes it possible to limit the space required for the disposition of the temperature measuring means, compared to known solutions. The measuring means may preferably comprise a bipolar diode. Advantageously, such an electronic circuit which bases its operation on the measurement of a variation of the forward voltage of a bipolar diode under the influence of a specific electric current, comprising an arrangement of transistors and / or a current generator, can be implanted directly in the substrate 110 of the light source. The circuit is fed in common with the source 101, so no additional connection to a dedicated power source is required. Alternatively to the use of a dedicated bipolar diode, a group of the rods 120 of the light source 110 may be used to obtain a measurement of the temperature. In this case, the group in question is powered by said specific electric current. Advantageously, said group among the rods 120 is fed periodically by said specific current for a period less than the period and during the rest of the period by a current determined for the group to participate in a lighting function. The embodiment of Figure 3 incorporates the features of Figure 2. The electroluminescent light source 201 includes a substrate 210 and a plurality of light emitting rods 220 protruding from the substrate. In this embodiment, the rods 220 are divided into three distinct groups 222, 224, 226. Obviously, a larger plurality of groups may be provided for a given light source and according to the intended application. Although groups are represented as bands, their geometry may be arbitrary. Each group comprises electroluminescent rods 220 having similar characteristics and can be independently powered, such that each group emits light having a specific intensity and / or color. The source further comprises means for measuring the temperature of the diodes 230 for each of the groups 222, 224, 226. The substrate 210 is advantageously made of silicon, which makes it possible to integrate the means for measuring the temperature 230 directly into the substrate 210. In the embodiment of FIG. 4, the electroluminescent light source 301 comprises a first substrate 310 and a plurality of light emitting rods 320 projecting from the substrate. In this embodiment, means for measuring the temperature of the rods are implanted on a second substrate 340 attached to the first substrate 310, so as to ensure good thermal bonding between the two substrates. The two substrates are attached to each other using, for example, a gold-tin weld. The second substrate 340 is attached to the first substrate 310 on the face of the latter which is opposite to the face on which the diodes 320 protrude. The location of the temperature measuring means 330 is chosen so as to obtain a measurement representative of the temperature of the rods 320. The component resulting from this assembly is of the "multi chip package" type, the second substrate integrating an additional function, c. that is to say, the measurement of temperature, with respect to the primary function of the source, which is the emission of light rays. The embodiment of FIG. 5 incorporates the features of FIG. 3. The electroluminescent light source 401 comprises a substrate 410 and a plurality of light emitting rods 420 projecting from the substrate. In this embodiment, the rods 420 are divided into three distinct groups 422, 424, 426. A larger plurality of groups may be provided for a given light source and according to the intended application, without departing from the scope of FIG. the present invention. Although groups are represented as bands, their geometry may be arbitrary. Each group comprises rods 420 having similar characteristics and can be independently powered so that each group emits light having a specific intensity and / or color. The source further comprises means for measuring the temperature of the rods 430 for each of the groups 422, 424, 426. The measuring means 430 may be implanted on a second substrate 440 common to all the measuring means. Alternatively, a dedicated medium substrate 430 may be provided. The substrate or substrates 430 are attached to the first substrate in a manner similar to the embodiment of FIG. 4 described above. The location of the means 430 is chosen to be able to measure, for each of the groups of rods 422, 424, 426, a temperature representative of the rods in question.
权利要求:
Claims (14) [1" id="c-fr-0001] claims A semiconductor light source (101, 201, 301, 401) comprising: - a first substrate (110, 210, 310, 410); a plurality of submillimetric electroluminescent rods (120, 220, 320, 420) projecting from the substrate; characterized in that the source comprises means for measuring the temperature of the electroluminescent rods (130, 230, 330, 430). [2" id="c-fr-0002] 2. Light source according to claim 1, characterized in that the first substrate comprises silicon. [3" id="c-fr-0003] 3. Light source according to one of claims 1 or 2, characterized in that the temperature measuring means (330, 430) are arranged on a second substrate (340, 440), the second substrate being attached to the first substrate (310 410) on the face opposite the face of which the rods (320, 420) protrude. [4" id="c-fr-0004] 4. Light source according to claim 3, characterized in that the second substrate comprises silicon. [5" id="c-fr-0005] 5. Light source according to one of claims 3 or 4, characterized in that the two substrates are attached by means of a gold-tin weld. [6" id="c-fr-0006] 6. Light source according to claim 2, characterized in that the temperature measuring means (130, 230) are integrated in the first substrate (110, 210). [7" id="c-fr-0007] 7. Light source according to claim 6, characterized in that the temperature measuring means (130, 230) are arranged among the rods (220). [8" id="c-fr-0008] 8. Light source according to one of claims 1 to 7, characterized in that the rods (220, 420) are divided into several groups (222, 224, 226, 422, 424, 426), the rods of each group being suitable for emitting a specific light, and in that the source comprises temperature measuring means (230, 430) for each of the groups. [9" id="c-fr-0009] 9. Light source according to claim 8, characterized in that each of the groups is able to emit light of specific intensity and / or color. [10" id="c-fr-0010] 10. Light source according to one of claims 1 to 9, characterized in that the means for measuring the temperature (130, 230, 330, 430) comprise a bipolar diode. [11" id="c-fr-0011] 11. Light source according to one of claims 1 to 9, characterized in that the temperature measuring means (130, 230, 330, 430) comprise a group of electroluminescent rods (120, 220, 320, 420) of the source. . [12" id="c-fr-0012] 12. Light source according to one of claims 1 to 11, characterized in that the temperature measuring means (130, 230, 330, 430) comprise an electronic measuring circuit. [13" id="c-fr-0013] 13. Light source according to claim 12, characterized in that the measuring circuit is integrated in the first substrate (110, 210) of the source. [14" id="c-fr-0014] 14. Light module comprising: at least one light source (101, 201, 301, 401) capable of emitting light rays; an optical device adapted to receive the light rays and to produce a light beam; characterized in that the one or more light sources are in accordance with one of claims 1 to 13.
类似技术:
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同族专利:
公开号 | 公开日 US20180254265A1|2018-09-06| KR20180054607A|2018-05-24| JP2018530153A|2018-10-11| EP3350845A1|2018-07-25| FR3041202B1|2017-09-15| CN108140696A|2018-06-08| WO2017046048A1|2017-03-23|
引用文献:
公开号 | 申请日 | 公开日 | 申请人 | 专利标题 US20070200512A1|2004-04-21|2007-08-30|Matsushita Electric Industrial Co., Ltd.|Semiconductor Chip For Driving Light Emitting Element, Light Emitting Device And Lighting Equipment| US20100219733A1|2009-03-02|2010-09-02|Hong Kong Applied Science And Technology Research Institute Co. Ltd.|Light emitting device package for temeperature detection| US20120032182A1|2010-08-09|2012-02-09|Micron Technology, Inc.|Solid state lights with thermal control elements| KR20120052651A|2010-11-16|2012-05-24|삼성엘이디 주식회사|Nano rod light emitting device| US20140015446A1|2012-07-13|2014-01-16|Qualcomm Incorporated|Method and apparatus for current derating with integrated temperature sensing| US20150221820A1|2014-02-05|2015-08-06|Samsung Electronics Co., Ltd.|Light-emitting device and light-emitting device package| US7335908B2|2002-07-08|2008-02-26|Qunano Ab|Nanostructures and methods for manufacturing the same| FR3011381B1|2013-09-30|2017-12-08|Aledia|OPTOELECTRONIC DEVICE WITH LIGHT EMITTING DIODES|CN109887856B|2019-01-21|2021-10-22|珠海市协宇电子有限公司|COB production process capable of detecting LED temperature| CN111463336B|2020-05-11|2021-06-22|福建省信达光电科技有限公司|Preparation method of LED lamp| US20210405291A1|2020-06-30|2021-12-30|Juniper Networks, Inc.|Integrated bandgap temperature sensor|
法律状态:
2016-09-28| PLFP| Fee payment|Year of fee payment: 2 | 2017-03-17| PLSC| Search report ready|Effective date: 20170317 | 2017-09-29| PLFP| Fee payment|Year of fee payment: 3 | 2018-09-28| PLFP| Fee payment|Year of fee payment: 4 | 2019-09-30| PLFP| Fee payment|Year of fee payment: 5 | 2020-09-30| PLFP| Fee payment|Year of fee payment: 6 | 2021-09-30| PLFP| Fee payment|Year of fee payment: 7 |
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申请号 | 申请日 | 专利标题 FR1558537A|FR3041202B1|2015-09-14|2015-09-14|MICRO- OR NANO-WIRE LED LIGHT SOURCE COMPRISING MEANS FOR MEASURING TEMPERATURE|FR1558537A| FR3041202B1|2015-09-14|2015-09-14|MICRO- OR NANO-WIRE LED LIGHT SOURCE COMPRISING MEANS FOR MEASURING TEMPERATURE| PCT/EP2016/071497| WO2017046048A1|2015-09-14|2016-09-13|Micro- or nano-wire led light source comprising temperature measurement means| KR1020187007303A| KR20180054607A|2015-09-14|2016-09-13|Micro-wire or nanowire LED light source including temperature measurement means| CN201680053377.0A| CN108140696A|2015-09-14|2016-09-13|Micro wire containing temperature measuring equipment or nanowire LED light source| US15/759,391| US20180254265A1|2015-09-14|2016-09-13|Micro- or nano-wire led light source comprising temperature measurement means| EP16763837.8A| EP3350845A1|2015-09-14|2016-09-13|Micro- or nano-wire led light source comprising temperature measurement means| JP2018513424A| JP2018530153A|2015-09-14|2016-09-13|Micro or nanowire LED light source with temperature measuring means| 相关专利
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